The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Oct. 31, 2007
Aaron Lee, Mountain View, CA (US);
Hounien Chen, Fremont, CA (US);
Sachit Chandra, Sunnyvale, CA (US);
Nancy Leong, Sunnyvale, CA (US);
Guowei Wang, Cupertino, CA (US);
Aaron Lee, Mountain View, CA (US);
Hounien Chen, Fremont, CA (US);
Sachit Chandra, Sunnyvale, CA (US);
Nancy Leong, Sunnyvale, CA (US);
Guowei Wang, Cupertino, CA (US);
Spansion, LLC, Sunnyvale, CA (US);
Abstract
A method is provided for programming a nonvolatile memory device including an array of memory cells, where each memory cell including a substrate, a control gate, a charge storage element, a source region and a drain region. The method includes receiving a programming window that identifies a plurality of memory cells in the array. A first group of memory cells to be programmed is identified from the plurality of memory cells in the programming window. The first group of memory cells is programmed and a programming state of the first group of memory cells is verified.