The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Dec. 17, 2004
Michael L. Hart, Palo Alto, CA (US);
Patrick Quinn, Chapelizod, IE;
Jan L. DE Jong, Cupertino, CA (US);
Michael L. Hart, Palo Alto, CA (US);
Patrick Quinn, Chapelizod, IE;
Jan L. de Jong, Cupertino, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
A method and apparatus compensate for process variations in the fabrication of semiconductor devices. A semiconductor device includes a control circuit that measures a performance parameter of the device, and in response thereto selectively biases one or more well regions of the device to compensate for process variations. For some embodiments, if measurement of the performance parameter indicates that the device does not fall within a specified range of operating parameters, the control circuit biases selected well regions to sufficiently alter the operating characteristics of transistors formed therein so that the device falls within the specified range of operating parameters.