The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Nov. 06, 2006
Yan-fei Liu, Kingston, CA;
Kai Xu, Mississauga, CA;
Yan-Fei Liu, Kingston, CA;
Kai Xu, Mississauga, CA;
Queen's University at Kingston, Kingston, Ontario, CA;
Abstract
This invention relates to a resonant gate drive circuit for a power switching device, such as a MOSFET, that uses a center-tapped transformer to increase the driving gate voltage approximately twice as high as the supply voltage. The gate capacitance of the power switching device is charged and discharged by a constant current source, which increases the switching transition speed of the power switch. The circuit is suitable for driving a pair of low side switches with 50% duty cycle or less, such as in a variable frequency resonant converter, push-pull converter, or the like.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile