The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Jun. 22, 2006
Yingjie Lin, El Paso, TX (US);
Yingjie Lin, El Paso, TX (US);
Delphi Technologies, Inc., Troy, MI (US);
Abstract
MOSFETs are provided to connect the sensor input terminals of a ratiometric output sensor to a pair of power terminals, and the gate of each MOSFET is coupled to the opposite power terminal so that both MOSFETs are rendered conducting to power the sensor when a supply voltage of a predetermined polarity is connected across the power terminals but one of the MOSFETs is rendered non-conducting when a voltage of the opposite polarity is so applied. The MOSFET that is rendered non-conducting is oriented so that any internal source-drain diode does not bypass current around the MOSFET when voltage of the opposite polarity is applied. Optionally, over-voltage protection is provided by an input voltage sensor controlling the other MOSFET through a third MOSFET.