The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Apr. 18, 2002
Ulrike Gruening-von Schwerin, Munich, DE;
Wolfgang Gustin, Anzing, DE;
Klaus-dieter Morhard, Dresden, DE;
Ulrike Gruening-Von Schwerin, Munich, DE;
Wolfgang Gustin, Anzing, DE;
Klaus-Dieter Morhard, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method is disclosed by means of which contact holes (K), (K) and (K), leading to integrated components can be produced with just one structuring mask, whereby contact holes (K) and (K) lead to contact regions (e,e) in the substrate () and contact holes (K) lead to contact regions (c,c) located on layer stacks (). An auxiliary layer is used for the etching of contact holes (K), (K), (K), which covers a part of the contact holes and thus serves as a selection mask. The auxiliary layer can be structured with a low-resolution lithography in comparison with the mask, such that only one single high-resolution lithography is necessary for the formation of all contact holes (K), (K), (K). The method is particularly suitable for the simultaneous production of contact holes for transistors in the cell field and the logic field of a DRAM.