The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2008

Filed:

Mar. 30, 2007
Applicants:

Kyle Hunt, Richardson, TX (US);

Neel Bhatt, Allen, TX (US);

Asadd M. Hosein, Plano, TX (US);

Brian L. Vialpando, Dallas, TX (US);

William R. Morrison, Dallas, TX (US);

Inventors:

Kyle Hunt, Richardson, TX (US);

Neel Bhatt, Allen, TX (US);

Asadd M. Hosein, Plano, TX (US);

Brian L. Vialpando, Dallas, TX (US);

William R. Morrison, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features () over a substrate (), and then forming a layer of material () over the semiconductor features (). This method further includes selectively etching portions of the layer of material () based upon a density or size of the semiconductor features () located thereunder, and then polishing remaining portions of the layer of material ().


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