The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Jan. 22, 2007
Applicants:
Kyeongmo Koo, Suwon, KR;
Jaihyung Won, Sungnam, KR;
Hyeonill Um, Sungnam, KR;
Junhyuk Jung, Osan, KR;
Sangwook Park, Suwon, KR;
Inventors:
Kyeongmo Koo, Suwon, KR;
Jaihyung Won, Sungnam, KR;
Hyeonill Um, Sungnam, KR;
Junhyuk Jung, Osan, KR;
Sangwook Park, Suwon, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, Kyungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H) plasma to clean the surface of the silicon wafer.