The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Aug. 11, 2004
Applicants:
Zhisong Huang, Fremont, CA (US);
Reza Sadjadi, Saratoga, CA (US);
Inventors:
Zhisong Huang, Fremont, CA (US);
Reza Sadjadi, Saratoga, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and apparatus is provided for using a plasma generated from a processing gas mixture including HO to efficiently strip photoresist material without causing significant damage to exposed, underlying low k dielectric material. The method includes disposing the processing gas mixture including the HO over the wafer. The processing gas mixture including the HO is then transformed into a plasma. The plasma serves to remove the photoresist material from the substrate without adversely affecting the exposed low k dielectric material.