The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Aug. 06, 2004
Applicants:
Jun-young Kim, Gyeonggi-do, KR;
Byoung-lyong Choi, Seoul, KR;
Eun-kyung Lee, Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/448 (2006.01); C23C 16/455 (2006.01); C23F 1/00 (2006.01); C23C 16/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.