The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Dec. 17, 2003
Kaoru Tsuchiya, Atsugi, JP;
Ayumi Ishigaki, Atsugi, JP;
Keiko Saito, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
In order to suppress defect modes such as shrinkage or unevenness in light-emission in a light emitting element and to shorten a time needed for a pretreatment for forming a layer containing an organic compound (EL layer), according to the present invention, a light emitting element is formed by forming a first electrode that is electrically connected to a source region or a drain region of a thin film transistor, forming an insulating film to cover an edge portion of the first electrode, performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen, then, forming a layer containing an organic compound (EL layer) over the first electrode and the insulating film, and forming a second electrode over the layer containing an organic compound (EL layer).