The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2008

Filed:

Mar. 01, 2007
Applicant:

Hiromi Nobukata, Kanagawa, JP;

Inventor:

Hiromi Nobukata, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory system includes a drive voltage generator to generate a drive voltage on the basis of a power supply voltage; a plurality of normal memory cells serving as a nonvolatile memory storing data by accumulating charge of a polarity according to the data to be stored in a floating gate at a level according to the drive voltage generated by the drive voltage generator, the data being written in or read from the nonvolatile memory; a minimum voltage detecting memory cell serving as a nonvolatile memory in which charge of a level to cause a read error when the power supply voltage is equal to or lower than a minimum voltage of predetermined operation guarantee is accumulated in a floating gate; and a controller to output a read result of the normal memory cells if no read error occurs in a reading operation in the minimum voltage detecting memory cell.


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