The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Aug. 24, 2005
James Karp, Saratoga, CA (US);
Jongheon Jeong, Palo Alto, CA (US);
Michael G. Ahrens, Sunnyvale, CA (US);
Shahin Toutounchi, Pleasanton, CA (US);
James Karp, Saratoga, CA (US);
Jongheon Jeong, Palo Alto, CA (US);
Michael G. Ahrens, Sunnyvale, CA (US);
Shahin Toutounchi, Pleasanton, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
A PMOS transistor is programmed as a non-volatile memory element by operating the PMOS transistor in accumulation mode. This facilitates merging the source and drain regions to form a low-resistance path because most heating occurs on the channel side of the gate dielectric, rather than on the gate terminal side. In a particular embodiment, boron is used as the dopant. Boron has a higher diffusivity than arsenic or phosphorous, which are typical n-type dopants. Boron's higher diffusivity promotes merging the source and drain regions.