The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2008

Filed:

Jun. 15, 2007
Applicant:

Sebastien Nicolas Ricavy, Saint Martin d'Heres, FR;

Inventor:

Sebastien Nicolas Ricavy, Saint Martin d'Heres, FR;

Assignee:

ARM Limited, Cambridge, GB;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 19/00 (2006.01); G11C 7/00 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
Abstract

Sensing circuitry and a method of operating such sensing circuitry are provided. The sensing circuitry has voltage change detection circuitry for detecting a change in voltage on at least one input line and for producing at least one output signal indicative of that change during a sensing stage of operation. The voltage change detection circuitry comprises at least one latch transistor having a body region insulated from a substrate. Further, body biasing circuitry is provided which, prior to the sensing stage of operation, causes a voltage to be applied to the body region that is derived from the voltage on one of said at least one input lines. Then, during the sensing stage of operation, the body biasing circuitry causes the voltage of the body region to float. Such an arrangement enables removal of the history effect that can sometime affect such latch transistors, whilst alleviating power consumption and noise issues that can occur in certain known sensing circuits.


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