The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Oct. 29, 2004
Chang-beom Eom, Madison, WI (US);
Kyung-jin Choi, Madison, WI (US);
Darrell G. Schlom, State College, PA (US);
Long-qing Chen, College Park, PA (US);
Chang-Beom Eom, Madison, WI (US);
Kyung-Jin Choi, Madison, WI (US);
Darrell G. Schlom, State College, PA (US);
Long-Qing Chen, College Park, PA (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
A strained thin film structure includes a substrate layer formed of a crystalline scandate material having a top surface, and a strained layer of crystalline ferroelectric epitaxially grown with respect to the crystalline substrate layer so as to be in a strained state and at a thickness below which dislocations begin to occur in the crystalline ferroelectric layer. An intermediate layer may be grown between the top surface of the substrate layer and the ferroelectric layer wherein the intermediate layer carries the lattice structure of the underlying substrate layer. The properties of the ferroelectric film are greatly enhanced as compared to the bulk ferroelectric material, and such films are suitable for use in applications including ferroelectric memories.