The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2008

Filed:

Mar. 14, 2005
Applicants:

Toshinobu Hirayama, Kawasaki, JP;

Toshiro Yamada, Kawasaki, JP;

Tatsuya Sugimoto, Kawasaki, JP;

Mitsuru Sugawara, Kawasaki, JP;

Inventors:

Toshinobu Hirayama, Kawasaki, JP;

Toshiro Yamada, Kawasaki, JP;

Tatsuya Sugimoto, Kawasaki, JP;

Mitsuru Sugawara, Kawasaki, JP;

Assignee:

Zeon Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.


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