The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Jan. 23, 2006
Soo-bong Heo, Yongin-si, KR;
Chel-jong Choi, Osan-si, KR;
Soo-bong Heo, Yongin-si, KR;
Chel-jong Choi, Osan-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
Provided is a method of fabricating a semiconductor device, the method including: forming an insulating layer on a single crystal substrate; etching the insulating layer in a predetermined pattern to expose the surface of the single crystal substrate; depositing an amorphous material on the insulating layer and the exposed surface of the single crystal substrate; and completely melting the amorphous material on the single crystal substrate and the insulating layer using laser annealing and crystallizing the melted amorphous material. The semiconductor device has a single crystalline silicon gate on the insulating layer.