The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
May. 27, 2004
Jae-sang RO, Dongbuichon-dong, Yongsan-gu, Seoul 140-720, KR;
Won-eui Hong, Seoul, KR;
Jae-Sang Ro, Dongbuichon-dong, Yongsan-gu, Seoul 140-720, KR;
Won-Eui Hong, Seoul, KR;
Other;
Abstract
Disclosed is a method for annealing a silicon thin film in a substrate in which an insulation layer and the silicon thin film are subsequently formed. The method includes heating or preheating the silicon thin film within a temperature range at which the substrate is not transformed during the process so as to generate an intrinsic carrier therein, thereby lowering a resistance to a value at which Joule heating is possible; and applying an electric field to the preheated silicon thin film so as to induce Joule heating by means of movement of the carrier, thereby conducting crystallization, eliminating crystal defects, and ensuring crystal growth. When using the method, Joule heating is selectively induced to a-Si thin film, a-Si/Poly-Si thin film or a Poly-Si thin film according to the preheating condition, thereby making a Poly-Si thin film of good quality within a very short time without damaging the substrate.