The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Dec. 29, 2005
Applicants:
Dong Hee Seo, Chungcheongbuk-do, KR;
Chee Hong Choi, Seoul, KR;
Inventors:
Dong Hee Seo, Chungcheongbuk-do, KR;
Chee Hong Choi, Seoul, KR;
Assignee:
Dongbu Electronics Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H00L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A fabricating method of a CMOS image sensor is disclosed, by which a light condensing effect is enhanced by providing an inner microlens to a semiconductor substrate. The CMOS image sensor includes a plurality of photodiodes on a semiconductor substrate, a plurality of inner microlenses on a plurality of the photodiodes, an insulating interlayer on a plurality of the inner microlenses, a plurality of metal lines within the insulating interlayer, a device protecting layer on the insulating interlayer, and a plurality of microlenses on the device protecting layer.