The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Sep. 08, 2006
Simon Buehlmann, Yongin-si, KR;
Simon Buehlmann, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method of manufacturing a ferroelectric thin film with good crystallinity and improved surface roughness includes: forming on a substrate a metal nitride-based precursor layer containing one selected from the group consisting of TiN, ZrTiN (0<x<1), FeN, and NbN; forming on the metal nitride-based precursor layer a mixed gas atmosphere containing oxygen (O) and one reactive gas selected from the group consisting of PbO(g), BiO(g), and KO(g); annealing the metal nitride-based precursor layer in the mixed gas atmosphere and forming a ferroelectric thin film containing one selected from the group consisting of PbTiO, PbZrTiO(0<x<1), BiTiO, BiTiO, BiFeO, and KNbO.