The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Dec. 02, 2006
J. Anthony Powell, North Olmsted, OH (US);
Philip G. Neudeck, Olmsted Falls, OH (US);
Andrew J. Trunek, Chargin Falls, OH (US);
David J. Spry, Medina, OH (US);
J. Anthony Powell, North Olmsted, OH (US);
Philip G. Neudeck, Olmsted Falls, OH (US);
Andrew J. Trunek, Chargin Falls, OH (US);
David J. Spry, Medina, OH (US);
Ohio Aerospace Institute, Cleveland, OH (US);
Abstract
A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a uniquely designed crystal shape whereby the direction of rapid growth is parallel to a preferred crystal direction. By establishing several regions of growth, a large single crystal that is largely defect-free can be grown at high growth rates. This process is particularly suitable for producing products for wide-bandgap semiconductors, such as SiC, GaN, AlN, and diamond. Large low-defect single crystals of these semiconductors enable greatly enhanced performance and reliability for applications involving high power, high voltage, and/or high temperature operating conditions.