The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Dec. 22, 2006
Farzan Fallah, San Jose, CA (US);
Behnam Amelifard, Los Angeles, CA (US);
Massoud Pedram, Beverly Hills, CA (US);
Farzan Fallah, San Jose, CA (US);
Behnam Amelifard, Los Angeles, CA (US);
Massoud Pedram, Beverly Hills, CA (US);
Fujitsu Limited, Kawasaki, JP;
University of Southern California, Los Angeles, CA (US);
Abstract
A method of forming a memory cell includes coupling a first transistor between a supply rail of a memory cell and a node operable to accept a supply voltage. The method further includes coupling a second transistor between a ground rail of the cell and a node operable to accept a ground. In one embodiment, the method includes forming the cell to accept selectively applied external voltages, wherein the external voltages are selected to minimize leakage current in the cell. In another embodiment, the method includes forming at least one of the first and the second transistors to have a channel width and/or a threshold voltage selected to minimize a total leakage current in the cell.