The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2008

Filed:

Dec. 29, 2006
Applicants:

Jun LI, Palo Alto, CA (US);

Prajit Nandi, Karnataka, IN;

Mehrdad Mofidi, Fremont, CA (US);

Inventors:

Jun Li, Palo Alto, CA (US);

Prajit Nandi, Karnataka, IN;

Mehrdad Mofidi, Fremont, CA (US);

Assignee:

SanDisk Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G11C 5/14 (2006.01); G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

Method for controlling voltage in a non-volatile memory system is provided. The method includes selecting a first input value for a voltage generator system operating in one of a plurality of modes, the first input value controlling a temperature dependent component of a voltage applied to a memory cell; and selecting a second input value for the voltage generator system operating in one of the plurality of modes, the second input value controlling a temperature independent component of the voltage applied to the memory cell. The temperature dependent component of the voltage applied to the memory cell and the temperature independent component of the voltage applied to the memory cell are controlled independently in response to the first input value and the second input value.


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