The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Nov. 10, 2004
Kenji Kitamura, Tsukuba, JP;
Sunao Kurimura, Tsukuba, JP;
Masaru Nakamura, Tsukuba, JP;
Shunji Takekawa, Tsukuba, JP;
Kazuya Terabe, Tsukuba, JP;
Shunichi Hishida, Tsukuba, JP;
Tamaki Shimura, Tsukuba, JP;
Kenji Kitamura, Tsukuba, JP;
Sunao Kurimura, Tsukuba, JP;
Masaru Nakamura, Tsukuba, JP;
Shunji Takekawa, Tsukuba, JP;
Kazuya Terabe, Tsukuba, JP;
Shunichi Hishida, Tsukuba, JP;
Tamaki Shimura, Tsukuba, JP;
National Institute for Materials Science, Ibaraki, JP;
Abstract
A problem to be solved is to provide a method of forming domain inverted regions of short period in a ferroelectric single crystal in a controllable time period of application of voltage and an optical wavelength conversion element using the same. A solving means of it solves the problem by forming (i) a control layer having a larger defect density Dthan the defect density Dof a ferroelectric single crystal (D<D) or forming (ii) a control layer having a lower degree of order of lattice points than the degree of order of lattice points of the ferroelectric single crystal on a face perpendicular to the direction of polarization of the ferroelectric single crystal in the ferroelectric single crystal.