The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2008

Filed:

May. 03, 2007
Applicants:

Mu-kyeng Jung, Suwon-si, KR;

Jae-whui Kim, Yongin-si, KR;

Bai-sun Kong, Seoul, KR;

Inventors:

Mu-Kyeng Jung, Suwon-si, KR;

Jae-Whui Kim, Yongin-si, KR;

Bai-Sun Kong, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
Abstract

A regulated cascode circuit includes a first PMOS FET and a second PMOS FET connected in series between a first terminal that receives a first supply voltage and an output terminal, a first NMOS FET and a second NMOS FET connected in series between the output terminal and a second terminal that receives a second supply voltage, and a regulation circuit. The regulation circuit outputs a first control signal for stabilizing a voltage at a drain of the first PMOS FET to a gate of the second PMOS FET based on a voltage of the drain of the first PMOS FET and outputs a second control signal for stabilizing a voltage change in a source of the first NMOS FET to a gate of the first NMOS FET based on a voltage of the source of the first NMOS FET.


Find Patent Forward Citations

Loading…