The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Sep. 13, 2005
Michiel Pertijs, Delft, NL;
Johan Huijsing, Schipluiden, NL;
Michiel Pertijs, Delft, NL;
Johan Huijsing, Schipluiden, NL;
NXP B.V., Eindhoven, NL;
Abstract
A bias circuit for use in bandgap voltage reference circuits and temperature sensors comprises a pair of transistors (Q, Q2), the first of which (Q1) is arranged to be biased at an emitter current, and the second of which (Q2) is arranged to be biased at an emitter current of m.lbi. The circuit is arranged such that the difference between the base-emitter voltages of the transistors is generated in part across a first resistance means having a valueand in use carrying a bias current equal toand in part across a second resistance means of value substantially equal toand in use carrying a current equal to the base current of the second transistor. This results in use in a bias current Iwhich, when used to bias a substrate bipolar transistor via its emitter, produces a collector current therefrom which is substantially PTAT and a base-emitter voltage which is substantially independent of the forward current gain of the substrate bipolar transistor.