The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2008

Filed:

Dec. 21, 2006
Applicants:

Yasuhiro Tomita, Osaka, JP;

Manabu Komiya, Kyoto, JP;

Hitoshi Suwa, Osaka, JP;

Toshiki Mori, Osaka, JP;

Inventors:

Yasuhiro Tomita, Osaka, JP;

Manabu Komiya, Kyoto, JP;

Hitoshi Suwa, Osaka, JP;

Toshiki Mori, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 19/14 (2006.01); G01R 31/08 (2006.01); H03K 5/22 (2006.01); G08B 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor leakage current detector of the present invention includes a first analog switch which causes a current to be measured to flow or to be cut off, a second analog switch which causes a reference current to flow or to be cut off, an integral capacitance element which is connected by the first analog switch and the second analog switch and is charged with the current to be measured or the reference current, a discharge unit which discharges the integral capacitor, and a comparison unit which compares the reference voltage with each of an integral voltage generated in the integral capacitor by a reference current after the discharge of the integral capacitor and an integral voltage generated in the integral capacitance element by the current to be measured after the discharge of the integral capacitor.


Find Patent Forward Citations

Quick Actions:

Tomita, Yasuhiro. (2008). Semiconductor leakage current detector and leakage current measurement method, semiconductor leakage current detector with voltage trimming function and reference voltage trimming method, and semiconductor integrated circuit thereof (U.S. Patent No. 7446549). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7446549

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…