The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Nov. 16, 2004
Applicants:
Munaf Rahimo, Uezwil, CH;
Stefan Linder, Zofingen, CH;
Inventors:
Munaf Rahimo, Uezwil, CH;
Stefan Linder, Zofingen, CH;
Assignee:
ABB Technology AG, Zurich, CH;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
In an insulated gate bipolar transistor, an improved safe operating area capability is achieved according to the invention by a two-fold base region comprising a first base region (), which is disposed in the channel region () so that it encompasses the one or more source regions (), but does not adjoin the second main surface underneath the gate oxide layer (), and a second base region () is disposed in the semiconductor substrate () underneath the base contact area () so that it partially overlaps with the channel region () and with the first base region ().