The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2008

Filed:

Jan. 13, 2007
Applicants:

Gerd O. Mueller, San Jose, CA (US);

Regina B Mueller-mach, San Jose, CA (US);

Thomas Juestel, Aachen, DE;

Petra Huppertz, Roetgen, DE;

Detlef Uwe Wiechert, Alsdorf, DE;

Dominik Uhlich, Buende, DE;

Inventors:

Gerd O. Mueller, San Jose, CA (US);

Regina B Mueller-Mach, San Jose, CA (US);

Thomas Juestel, Aachen, DE;

Petra Huppertz, Roetgen, DE;

Detlef Uwe Wiechert, Alsdorf, DE;

Dominik Uhlich, Buende, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phosphor converted light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the light emitting layer being configured to emit light having a first peak wavelength; a first phosphor configured to emit light having a second peak wavelength; and a second phosphor configured to emit light having a third peak wavelength. The second phosphor is an Eu-activated phosphor, configured such that in the excitation spectrum at 298K and 1.013 bar, a maximum intensity in a wavelength range between 460 nm and 470 nm is at least 5% of a maximum intensity in a wavelength range between 220 nm to 320 nm.


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