The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Jun. 10, 2005
Kwang-ok Kim, Ichon-shi, KR;
Yun-seok Cho, Ichon-shi, KR;
Kwang-Ok Kim, Ichon-shi, KR;
Yun-Seok Cho, Ichon-shi, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
Disclosed is a method for fabricating a semiconductor device by using an amorphous carbon layer as a sacrificial hard mask. The method includes the steps of: forming an amorphous carbon layer on an etch target layer; forming a photoresist pattern on the amorphous carbon layer; etching the amorphous carbon layer by using the photoresist pattern to form a sacrificial hard mask; and etching the etch target layer by using the sacrificial hard mask to form a predetermined pattern.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile