The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Feb. 08, 2006
Leo Mathew, Austin, TX (US);
Lixin GE, Austin, TX (US);
Surya Veeraraghavan, Austin, TX (US);
Freescale Semiconductors, Inc., Austin, TX (US);
Abstract
A method for making a semiconductor device includes patterning a semiconductor layer, overlying an insulator layer, to create a first active region and a second active region, wherein the first active region is of a different height from the second active region, and wherein at least a portion of the first active region has a first conductivity type and at least a portion of the second active region has a second conductivity type different from the first conductivity type in at least a channel region of the semiconductor device. The method further includes forming a gate structure over at least a portion of the first active region and the second active region. The method further includes removing a portion of the second active region on one side of the semiconductor device.