The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Jan. 10, 2007
Wataru Saito, Tokyo-to, JP;
Yudai Yamashita, Tokyo-to, JP;
Wataru Saito, Tokyo-to, JP;
Yudai Yamashita, Tokyo-to, JP;
Dai Nippon Printing Co., Ltd., Tokyo-to, JP;
Abstract
The present invention provides a thin-film transistor that is formed by using a patterning method capable of forming a semiconductor channel layer in sub-micron order and a method for manufacturing thereof that provides a thin-film transistor with a larger area, and suitable for mass production. These objects are achieved by a thin-film transistor formed on a substratewith a finely processed concavoconvex surface, in which a source electrode and a drain electrode are formed on adjacent convex portions of the concavoconvex surface, with a channel and a gate being formed on a concave area between the convex portions. A gate electrode, a gate insulating filmand a semiconductor channel layerare laminated in this order on the concave area from the bottom surface of the concave portion toward the top surface. Preferably, in this thin-film transistor, the concavoconvex surface is formed of a curing resin, a semiconductor constituting a thin-film transistor is formed of a semiconductor such as polycrystal silicon or an organic semiconductor material, and the substrate is formed of glass, plastic or a composite material of these materials.