The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Jun. 26, 2006
Shinji Suminoe, Tenri, JP;
Hiroyuki Nakanishi, Nara, JP;
Toshiya Ishio, Nabari, JP;
Yoshihide Iwazaki, Tenri, JP;
Katsunobu Mori, Nara, JP;
Shinji Suminoe, Tenri, JP;
Hiroyuki Nakanishi, Nara, JP;
Toshiya Ishio, Nabari, JP;
Yoshihide Iwazaki, Tenri, JP;
Katsunobu Mori, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A manufacturing method of a semiconductor device, comprising the steps of forming an insulation layer, which has an opening section in an area including an area on an electrode pad, on a top surface of the semiconductor substrate on which the electrode pad is formed; at least forming a first barrier metal layer, which becomes a part of a leading wiring layer, in an inner peripheral surface of the opening section including the top surface of the electrode pad; at least forming a main conductor layer, which becomes a part of the leading wiring layer, in an area surrounded by the first barrier metal layer in the opening section; eliminating an upper portion of the main conductor layer at least to a position at which the first barrier metal layer is exposed, and forming a second barrier metal layer, which becomes a part of the leading wiring layer, so as to cover the whole top surface of the main conductor layer.