The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7445884 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 04, 2008

Filed:

Jun. 02, 2005
Applicant:

Hiroyuki Yanagisawa, Hino, JP;

Inventor:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/16 (2006.01); G03B 27/32 (2006.01); B41J 2/435 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thermal development device including: a thermal development section for heating to develop a latent image formed on a light-sensitive surface of a photothermographic material; a cooling section for cooling the photothermographic material passed the thermal development section under a condition that a cooling rate for a light-insensitive surface of the photothermographic material is faster than the cooling rate for the light-sensitive surface of the photothermographic material; and a conveyance section in which the photothermographic material is conveyed via the thermal development section and the cooling section, and the length of the conveyance path that passes the cooling section is not more than 1.5 times the length of the conveyance path that passes the thermal development section.


Find Patent Forward Citations

Yanagisawa, Hiroyuki. (2008). Photothermographic material, development method and thermal development device thereof (U.S. Patent No. 7445884). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7445884

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