The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
May. 31, 2005
Applicant:
Isao Amemiya, Yamanashi, JP;
Inventor:
Isao Amemiya, Yamanashi, JP;
Assignee:
Hoya Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A mask blank for electron beam exposure includes a pattern support layer that transmits an electron beam therethrough, an electron beam scattering layer formed on the pattern support layer, and a support body supporting the pattern support layer and the electron beam scattering layer. The pattern support layer is formed by a material that has an amorphous structure and that is mainly composed of carbon-silicon bonds. The pattern support layer is a tensional stress membrane that has a surface roughness of 0.2 (nm, Rms) or less. A mask for electron beam exposure is formed by patterning the electron beam scattering layer of the mask blank.