The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2008

Filed:

Jul. 03, 2002
Applicant:

Yasushi Ohbayashi, Hamamatsu, JP;

Inventor:

Yasushi Ohbayashi, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/40 (2006.01); C23C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A vapor deposition process for depositing TiO2 and a vapor desposition process for depositing SiO2 are alternately repeated in a multi-layer film forming process. A refractive index that a thin film formed by each vapor depositing will provide is individually determined prior to each relative vapor depositing, and vapor deposition control data is prepared based on such a refractive index. Each vapor deposition is controlled by using a relative vapor deposition control data thus prepared. Therefore, each vapor deposition process can be accurately controlled according to the refractive index of a thin film even if repeated vapor deposition processes change the refractive index. Accordingly, a multilayer film having desired optical characteristics can be formed.


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