The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2008

Filed:

Apr. 24, 2006
Applicants:

Sudhir Kumar Madan, Richardson, TX (US);

Sung-wei Lin, Plano, TX (US);

John Fong, Allen, TX (US);

Inventors:

Sudhir Kumar Madan, Richardson, TX (US);

Sung-Wei Lin, Plano, TX (US);

John Fong, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

An FeRAM memory array wherein the plate lines run in the direction of word lines is described that provides a reduced plate line resistance in arrays having a common plate line connection. The lower plate line resistance reduces the magnitude of negative spikes on the plate line to reduce the potential for FeCap depolarization. Two or more plate lines of a plurality of columns of memory cells are interconnected along a bit line direction. Some or all of the plate lines of one or more columns of dummy memory cells may also be interconnected to reduce the plate line resistance and minimize any increase in the bit line capacitance for the active cells of the array. The improved FeRAM array provides a reduced data error rate, particularly at fast memory cycle times.


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