The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2008

Filed:

Dec. 07, 2004
Applicant:

Carlos J. R. P. Augusto, San Jose, CA (US);

Inventor:

Carlos J. R. P. Augusto, San Jose, CA (US);

Assignee:

Quantum Semiconductor LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01); H01L 27/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons of different energies are selectively absorbed in or emitted by the active-layers. Contact means are arranged separately on the lateral sides of the vertical stack for injecting charge carriers into the photon-emitting layers and extracting charge carriers generated in the photon-absorbing layers. The device can be used for various applications for light emission or light absorption. The stack of active layers may also include top and bottom electrodes whereby the device can also be operated as a FET device.


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