The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Dec. 10, 2007
Woong Je Sung, Bucheon-si, KR;
Woong Je Sung, Bucheon-si, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method for manufacturing a bipolar transistor comprising: forming a device isolation layer in a device isolation region of a semiconductor substrate having therein first and second well regions having a first conductivity; implanting ions of a second conductivity in the first well to form a third well; forming and patterning a conductive layer on the third well region to form a base electrode pattern; forming a spacer on a sidewalls of the base electrode pattern; implanting first conductivity type ions in the semiconductor substrate to form an emitter region adjacent to the base electrode pattern and form a collector region in the second well region; and performing a diffusion process to form a base region adjacent to the emitter region.