The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Oct. 25, 2006
Ki-jae Hur, Seoul, KR;
Kyung-seok OH, Seongnam-si, KR;
Joo-sung Park, Yongin-si, KR;
Jung-hyun Shin, Seongnam-si, KR;
Ki-Jae Hur, Seoul, KR;
Kyung-Seok Oh, Seongnam-si, KR;
Joo-Sung Park, Yongin-si, KR;
Jung-Hyun Shin, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant doping a first side of the channel region, and includes a source region formed with the first dopant doping a second side of the channel region. The drain and source regions are doped asymmetrically such that a first charge carrier profile between the channel and drain regions has a steeper slope than a second charge carrier profile between the channel and source regions.