The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Mar. 15, 2006
Jae-hyoung Choi, Hwaseong-si, KR;
Jung-hee Chung, Suwon-si, KR;
Se-hoon OH, Hwaseong-si, KR;
Jong-cheol Lee, Seoul, KR;
Jae-Hyoung Choi, Hwaseong-si, KR;
Jung-hee Chung, Suwon-si, KR;
Se-hoon Oh, Hwaseong-si, KR;
Jong-cheol Lee, Seoul, KR;
Abstract
Provided are methods of manufacturing dielectric films including forming a first dielectric film on a wafer using atomic layer deposition (ALD) in a first batch type apparatus, forming a second dielectric film on the first dielectric film using atomic layer deposition in a second batch type apparatus, wherein the second dielectric film has a higher crystallization temperature than the first dielectric film and forming a third dielectric film on the second dielectric film using atomic layer deposition in a third batch type apparatus. Methods of manufacturing metal-insulator-metal (MIM) capacitors using the methods of forming the dielectric films and batch type atomic layer deposition apparatus for forming the dielectric films are also provided.