The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
May. 21, 2004
Hideomi Koinuma, Tokyo, JP;
Yuji Matsumoto, Kanagawa, JP;
Ryota Takahashi, Tokyo, JP;
Japan Science and Technology Agency, Kawaguchi-shi, JP;
Abstract
The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (BiO)ABO, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb. A flux layer, containing a composition satisfying the inequality 0<CuO/BiO<2 and/or 0≦TiO/BiO<7/6 on a molar basis is deposited on a wafer and a single-crystalline thin-film is then deposited on the flux layer placed on the wafer. A melt of a composition which contains raw materials and a flux and which satisfies the above inequality is prepared and the melt is cooled such that a single crystal is grown. A CuO flux layer is deposited on a wafer and Bi—Ti—O is supplied to the flux layer using a BiTiO, BiTiO, or BiTiOtarget of which the Bi content is greater than that of an object film such that a BiTiOsingle-crystalline thin-film is formed above the wafer.