The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Apr. 19, 2006
Shuichi Inami, Tokyo, JP;
Hiroki Murakami, Tokyo, JP;
Nobumitsu Takase, Tokyo, JP;
Ken Hamada, Tokyo, JP;
Tsuyoshi Nakamura, Tokyo, JP;
Shuichi Inami, Tokyo, JP;
Hiroki Murakami, Tokyo, JP;
Nobumitsu Takase, Tokyo, JP;
Ken Hamada, Tokyo, JP;
Tsuyoshi Nakamura, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
This method for producing silicon single crystals includes: growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a cooling member which circumferentially surrounds the silicon single crystal and has an inner contour that is coaxial with a pull axis, wherein an ambient gas in which the silicon single crystal is grown includes a hydrogen-atom-containing substance in gaseous form. This silicon single crystal is produced by the above method.