The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7441325 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 28, 2008

Filed:

Aug. 01, 2005
Applicants:

Yunxiao Gao, Sunnyvale, CA (US);

Hung-chin Guthrie, Saratoga, CA (US);

Ming Jiang, San Jose, CA (US);

Sue Siyang Zhang, Saratoga, CA (US);

Inventors:

Yunxiao Gao, Sunnyvale, CA (US);

Hung-Chin Guthrie, Saratoga, CA (US);

Ming Jiang, San Jose, CA (US);

Sue Siyang Zhang, Saratoga, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/127 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A perpendicular write head including a main pole and a trailing shield, the main pole being made of a diamond-like carbon (DLC) layer as hard mask and a rhodium (Rh) layer as shield gap, both DLC and Rh layers being CMP stop layers so as to avoid corner rounding and damage from chemical mechanical planarization (CMP) process, the DLC layer being removed by reactive ion etching (RIE) to create a trench, the trailing shield being deposited into the trench for self alignment.


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Gao, Yunxiao. (2008). Perpendicular head with trailing shield and rhodium gap process (U.S. Patent No. 7441325). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7441325

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