The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Dec. 07, 2005
Robert R. Alfano, Bronx, NY (US);
Vladimir Petricevic, New York, NY (US);
Alexey Bykov, Bronx, NY (US);
Robert R. Alfano, Bronx, NY (US);
Vladimir Petricevic, New York, NY (US);
Alexey Bykov, Bronx, NY (US);
Research Foundation of the City University of New York, New York, NY (US);
Abstract
A method is described to improve and produce purer Cr-doped laser materials and lasers with reduced co-incorporation of chromium in any other valence states, such as Cr, Cr, Cr, and Cr. The method includes: 1) certain crystals of olivine structure with large cation (Ca) in octahedral sites such as Cr:CaGeO, Cr:CaSiO, Cr:CaGeSiO(where 0<x<1), and/or 2) high-temperature solution growth techniques that enable the growth of the crystals below the temperature of polymorphic transitions by using low melting point solvent based on oxide, fluoride and/or chloride compounds. Purer Cr-doped laser materials are characterized by a relatively high concentration of Cr-lasing ion in crystalline host that makes these materials suitable for compact high power (thin disk/wedge) NIR laser applications.