The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Sep. 05, 2006
Chang Wook Jeong, Seoul, KR;
Su-youn Lee, Yongin-si, KR;
Won-cheol Jeong, Seoul, KR;
Jae-hyun Park, Yongin-si, KR;
Su-jin Ahn, Seoul, KR;
Fai Yeung, Yongin-si, KR;
Chang Wook Jeong, Seoul, KR;
Su-Youn Lee, Yongin-si, KR;
Won-Cheol Jeong, Seoul, KR;
Jae-Hyun Park, Yongin-si, KR;
Su-Jin Ahn, Seoul, KR;
Fai Yeung, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A phase-change random access memory device may include a phase-change pattern, a first electrode structure connected to the phase-change pattern, and a second electrode structure spaced apart from the first electrode structure and connected to the phase-change pattern, wherein at least one of the first electrode structure and the second electrode structure includes a plurality of resistor patterns connected to the phase-change pattern in parallel.