The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Apr. 17, 2006
Applicants:
Motoyoshi Iwata, Osaka, JP;
Hiroyasu Takehara, Osaka, JP;
Hiroyuki Yamauchi, Osaka, JP;
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
There are provided an RF power amplifier transistor (), a bias supply circuit () which supplies a bias current to the base of the RF power amplifier transistor and a bias control circuit () connected between the base of the RF power amplifier transistor and bias supply circuit, and the bias control circuit is connected to the power supply () of the RF power amplifier transistor, thus realizing high efficiency of the RF power amplifier when the power level is low and improving the temperature characteristic of the power amplifier when the power level is low.