The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Feb. 27, 2007
Masahiko Inamori, Osaka, JP;
Kazuki Tateoka, Kyoto, JP;
Hirokazu Makihara, Osaka, JP;
Singo Matsuda, Kyoto, JP;
Kenta Matsui, Osaka, JP;
Singo Enomoto, Osaka, JP;
Haruhiko Koizumi, Osaka, JP;
Masahiko Inamori, Osaka, JP;
Kazuki Tateoka, Kyoto, JP;
Hirokazu Makihara, Osaka, JP;
Singo Matsuda, Kyoto, JP;
Kenta Matsui, Osaka, JP;
Singo Enomoto, Osaka, JP;
Haruhiko Koizumi, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A high-frequency power amplifier with a temperature compensation function for power amplifying a high-frequency signal, includes: a power amplifying transistor having an emitter grounded; a high power output bias circuit that supplies a high power output current corresponding to a high power output of the high-frequency power amplifier to the power amplifying transistor; and a low power output bias circuit that supplies a low power output current corresponding to a low power output of the high-frequency power amplifier to the power amplifying transistor.