The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2008

Filed:

Jun. 15, 2005
Applicants:

Chul-woo Park, Gyeonggi-do, KR;

Kyu-hyoun Kim, Gyeonggi-do, KR;

Beom-sig Cho, Gyeonggi-do, KR;

Inventors:

Chul-Woo Park, Gyeonggi-do, KR;

Kyu-Hyoun Kim, Gyeonggi-do, KR;

Beom-Sig Cho, Gyeonggi-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0175 (2006.01);
U.S. Cl.
CPC ...
Abstract

A level shifting circuit and method that reduce leakage current are provided. The level shifting circuit includes: a logic circuit including a plurality of MOSFETs (metal-oxide-semiconductor field effect transistors) connected in series between an output terminal and a source, receiving an input signal having a first logic level and a second logic level, changing the input signal to a signal having a first logic level and a third logic level in response to a feedback signal supplied to one of the MOSFETs, and outputting the changed signal as an output signal; and a feedback circuit generating the feedback signal in response to the output signal.


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