The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Aug. 18, 2005
Yasue Sato, Machida, JP;
Masaru Kamio, Sagamihara, JP;
Ihachiro Gofuku, Chigasaki, JP;
Hisanori Tsuda, Atsugi, JP;
Tomoko Narusawa, Hiratsuka, JP;
Yoshiyuki Shimada, Fukaya, JP;
Hiromasa Mitani, Hiratsuka, JP;
Kazuyuki Seino, Fukaya, JP;
Takashi Nishimura, Fukaya, JP;
Yasue Sato, Machida, JP;
Masaru Kamio, Sagamihara, JP;
Ihachiro Gofuku, Chigasaki, JP;
Hisanori Tsuda, Atsugi, JP;
Tomoko Narusawa, Hiratsuka, JP;
Yoshiyuki Shimada, Fukaya, JP;
Hiromasa Mitani, Hiratsuka, JP;
Kazuyuki Seino, Fukaya, JP;
Takashi Nishimura, Fukaya, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
It is an object of the present invention to provide an image display apparatus in which the change over time of its electron source characteristics is small, and in which uneven brightness and color shift of an image is almost unnoticeable. To achieve this object, the present invention is directed to an image display apparatus containing an electron source substrate having a plurality of electron-emitting devices arrayed thereon, an image forming substrate arranged so as to face the electron source substrate and having a phosphor film and an anode electrode film, and magnetic field generating means, wherein a component parallel to the electron source substrate of a magnetic flux density of a magnetic field generated by the magnetic field generating means is not greater than 0.01 Tesla at any location of the electron-emitting devices.