The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Nov. 08, 2000
Hidetoshi Ishida, Kyoto, JP;
Kazuo Miyatsuji, Osaka, JP;
Hidetoshi Furukawa, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Daisuke Ueda, Osaka, JP;
Hidetoshi Ishida, Kyoto, JP;
Kazuo Miyatsuji, Osaka, JP;
Hidetoshi Furukawa, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Daisuke Ueda, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The RF device of the present invention includes: a semiconductor substrate; and first and second semiconductor components provided on the substrate. Each of the components includes source electrodes, a gate electrode and a drain electrode. And multiple through holes, which pass through the substrate in the thickness direction, are opened in a region of the substrate between the two components. To enhance the effect of suppressing electrical interference between the components, a gap between two adjacent ones of the through holes is preferably smaller than the thickness of the substrate.